63-5059-28 ［Discontinued］IPB017N06N3GATMA1 N-Channel MOSFET, 180 A, 60 V OptiMOS 3, 7-Pin D2PAK Infineon IPB017N06N3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 180 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 1.7 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 7
- Channel Mode : Enhancement
- Maximum Power Dissipation : 250 W
- Minimum Operating Temperature : -55 °C
- CODE No.:754-5412
| Order No. | 63-5059-28 | |
|---|---|---|
| Model No. | IPB017N06N3GATMA1 | |
| Standard price |
JPY: 450
USD: 2.82
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
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| Stock in Japan | - | |