63-5059-26 [Discontinued]BSZ160N10NS3GATMA1 N-Channel MOSFET, 40 A, 100 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ160N10NS3GATMA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 40 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 33 mΩ
- Maximum Gate Threshold Voltage : 3.5V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TSDSON
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Maximum Power Dissipation : 63 W
- Number of Elements per Chip : 1
- CODE No.:754-5373
| Order No. | 63-5059-26 | |
|---|---|---|
| Model No. | BSZ160N10NS3GATMA1 | |
| Standard price |
JPY: 240
USD: 1.50
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(2pieces) | |
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| Stock in Japan | - | |
![[Discontinued]BSZ160N10NS3GATMA1 N-Channel MOSFET, 40 A, 100 V OptiMOS 3, 8-Pin TSDSON Infineon BSZ160N10NS3GATMA1](https://aimg.as-1.co.jp/c/63/5059/26/63505926.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)