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• 63-5058-23 SPB80P06PGATMA1 P-Channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK Infineon　SPB80P06PGATMA1

Infineon

63-5058-23　SPB80P06PGATMA1 P-Channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK Infineon　SPB80P06PGATMA1

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特徴

• Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant

Spec

• Quantity：1piece
• Channel Type : P
• Maximum Continuous Drain Current : 80 A
• Maximum Drain Source Voltage : 60 V
• Maximum Drain Source Resistance : 23 mΩ
• Maximum Gate Threshold Voltage : 4V
• Minimum Gate Threshold Voltage : 2.1V
• Maximum Gate Source Voltage : -20 V, +20 V
• Package Type : D2PAK (TO-263)
• Mounting Type : Surface Mount
• Pin Count : 3
• Channel Mode : Enhancement
• Category : Power MOSFET
• Maximum Power Dissipation : 340 W
• Typical Turn-On Delay Time : 24 ns
• CODE No.:753-3166
•  

Order No.Order No.ss="init"> 取扱点数300万点 How to use English China Indonesia Korea Thailand Vietnam Contact us すべてのカテゴリ すべてのカテゴリ Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Featured Products Contact us Quote Other Requests AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-5058-23 SPB80P06PGATMA1 P-Channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK Infineon　SPB80P06PGATMA1 Infineon 63-5058-23　SPB80P06PGATMA1 P-Channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK Infineon　SPB80P06PGATMA1 印刷 PDF 特徴 Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant 仕様 Quantity：1piece Channel Type : P Maximum Continuous Drain Current : 80 A Maximum Drain Source Voltage : 60 V Maximum Drain Source Resistance : 23 mΩ Maximum Gate Threshold Voltage : 4V Minimum Gate Threshold Voltage : 2.1V Maximum Gate Source Voltage : -20 V, +20 V Package Type : D2PAK (TO-263) Mounting Type : Surface Mount Pin Count : 3 Channel Mode : Enhancement Category : Power MOSFET Maximum Power Dissipation : 340 W Typical Turn-On Delay Time : 24 ns CODE No.:753-3166   Order No. 63-5058-23 型番 SPB80P06PGATMA1 標準価格 JPY: 990 USD: 6.16 Excange rate 1USD= 160.72JPY Valid price in Japan Quantity 1piece Stock in Japan Supplier Stock QuoteQuotes="init"> 取扱点数300万点 How to use English China Indonesia Korea Thailand Vietnam Contact us すべてのカテゴリ すべてのカテゴリ Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Featured Products Contact us Quote Other Requests AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-5058-23 SPB80P06PGATMA1 P-Channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK Infineon　SPB80P06PGATMA1 Infineon 63-5058-23　SPB80P06PGATMA1 P-Channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK Infineon　SPB80P06PGATMA1 印刷 PDF 特徴 Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant 仕様 Quantity：1piece Channel Type : P Maximum Continuous Drain Current : 80 A Maximum Drain Source Voltage : 60 V Maximum Drain Source Resistance : 23 mΩ Maximum Gate Threshold Voltage : 4V Minimum Gate Threshold Voltage : 2.1V Maximum Gate Source Voltage : -20 V, +20 V Package Type : D2PAK (TO-263) Mounting Type : Surface Mount Pin Count : 3 Channel Mode : Enhancement Category : Power MOSFET Maximum Power Dissipation : 340 W Typical Turn-On Delay Time : 24 ns CODE No.:753-3166   アズワン品番 63-5058-23 型番 SPB80P06PGATMA1 標準価格 JPY: 990 USD: 6.16 Excange rate 1USD= 160.72JPY Valid price in Japan 入り数 1piece 在庫数 サプライヤ在庫 Quote その他のお問い合わせ This page is the page of SPB80P06PGATMA1 P-Channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK Infineon sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.