63-5058-23 SPB80P06PGATMA1 P-Channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK Infineon SPB80P06PGATMA1
Features
- Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant
Spec
- Quantity：1piece
- Channel Type : P
- Maximum Continuous Drain Current : 80 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 23 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2.1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : D2PAK (TO-263)
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 340 W
- Typical Turn-On Delay Time : 24 ns
- CODE No.:753-3166
| Order No. | 63-5058-23 | |
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| Model No. | SPB80P06PGATMA1 | |
| Standard price |
JPY: 990
USD: 6.21
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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