63-5058-17 ［Discontinued］IPD90P03P4L04ATMA1 P-Channel MOSFET, 90 A, 30 V OptiMOS P, 3-Pin DPAK Infineon IPD90P03P4L04ATMA1
Features
- Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
Spec
- Quantity：1bag(5pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 90 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 6.8 mΩ
- Maximum Gate Threshold Voltage : 2V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -16 V, +5 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 137 W
- Height : 2.3mm
- CODE No.:753-3033
| Order No. | 63-5058-17 | |
|---|---|---|
| Model No. | IPD90P03P4L04ATMA1 | |
| Standard price |
JPY: 2,270
USD: 14.23
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |