Infineon

63-5058-16　IPD30N10S3L34ATMA1 N-Channel MOSFET, 30 A, 100 V OptiMOS T, 3-Pin DPAK Infineon　IPD30N10S3L34ATMA1

印刷

特徴

Infineon OptiMOS™T Power MOSFETs. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant)

仕様

Quantity：1bag(10pieces)
Channel Type : N
Maximum Continuous Drain Current : 30 A
Maximum Drain Source Voltage : 100 V
Maximum Drain Source Resistance : 42 mΩ
Maximum Gate Threshold Voltage : 2.4V
Minimum Gate Threshold Voltage : 1.2V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : DPAK (TO-252)
Mounting Type : Surface Mount
Pin Count : 3
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 57 W
Typical Turn-Off Delay Time : 18 ns
CODE No.:753-3018

アズワン品番 63-5058-16

型番 IPD30N10S3L34ATMA1

Standard price

JPY: 2,520 USD: 15.68

Excange rate 1USD= 160.72JPY
Valid price in Japan

入り数 1bag(10pieces)

Stock in Japan

Supplier StockSupplier Stock"init"> 63-5058-16 IPD30N10S3L34ATMA1 N-Channel MOSFET, 30 A, 100 V OptiMOS T, 3-Pin DPAK Infineon　IPD30N10S3L34ATMA1 【AXEL GLOBAL】 アズワン

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Infineon

63-5058-16　IPD30N10S3L34ATMA1 N-Channel MOSFET, 30 A, 100 V OptiMOS T, 3-Pin DPAK Infineon　IPD30N10S3L34ATMA1

印刷

特徴

Infineon OptiMOS™T Power MOSFETs. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.. N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant)

仕様

Quantity：1bag(10pieces)
Channel Type : N
Maximum Continuous Drain Current : 30 A
Maximum Drain Source Voltage : 100 V
Maximum Drain Source Resistance : 42 mΩ
Maximum Gate Threshold Voltage : 2.4V
Minimum Gate Threshold Voltage : 1.2V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : DPAK (TO-252)
Mounting Type : Surface Mount
Pin Count : 3
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 57 W
Typical Turn-Off Delay Time : 18 ns
CODE No.:753-3018

アズワン品番	63-5058-16
型番	IPD30N10S3L34ATMA1
標準価格	JPY: 2,520 USD: 15.68 Excange rate 1USD= 160.72JPY Valid price in Japan
入り数	1bag(10pieces)
在庫数
Supplier Stock

This page is the page of IPD30N10S3L34ATMA1 N-Channel MOSFET, 30 A, 100 V OptiMOS T, 3-Pin DPAK Infineon sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

63-5058-16　IPD30N10S3L34ATMA1 N-Channel MOSFET, 30 A, 100 V OptiMOS T, 3-Pin DPAK Infineon　IPD30N10S3L34ATMA1

Features

Spec

63-5058-16　IPD30N10S3L34ATMA1 N-Channel MOSFET, 30 A, 100 V OptiMOS T, 3-Pin DPAK Infineon　IPD30N10S3L34ATMA1

特徴

仕様

63-5058-16　IPD30N10S3L34ATMA1 N-Channel MOSFET, 30 A, 100 V OptiMOS T, 3-Pin DPAK Infineon　IPD30N10S3L34ATMA1

特徴

仕様