63-5058-10 BSS83PH6327XTSA1 P-Channel MOSFET, 330 mA, 60 V SIPMOS, 3-Pin SOT-23 Infineon BSS83PH6327XTSA1
Features
- Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant
Spec
- Quantity：1bag(50pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 330 mA
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 3 Ω
- Maximum Gate Threshold Voltage : 2V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Small Signal
- Maximum Power Dissipation : 360 mW
- Typical Turn-On Delay Time : 23 ns
- CODE No.:753-2857
| Order No. | 63-5058-10 | |
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| Model No. | BSS83PH6327XTSA1 | |
| Standard price |
JPY: 1,350
USD: 8.46
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(50pieces) | |
| Stock in Japan |
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| Supplier Stock |
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