63-5058-09 BSS192PH6327FTSA1 P-Channel MOSFET, 190 mA, 250 V SIPMOS, 3-Pin SOT-89 Infineon BSS192PH6327FTSA1
Features
- Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant
Spec
- Quantity：1bag(10pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 190 mA
- Maximum Drain Source Voltage : 250 V
- Maximum Drain Source Resistance : 20 Ω
- Maximum Gate Threshold Voltage : 2V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-89
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Small Signal
- Maximum Power Dissipation : 1 W
- Typical Turn-Off Delay Time : 72 ns
- CODE No.:753-2848
| Order No. | 63-5058-09 | |
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| Model No. | BSS192PH6327FTSA1 | |
| Standard price |
JPY: 1,040
USD: 6.52
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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