63-5058-08 [Discontinued]BSS169H6327XTSA1 N-Channel MOSFET, 170 mA, 100 V Depletion SIPMOS, 3-Pin SOT-23 Infineon BSS169H6327XTSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity:1bag(25pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 170 mA
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 12 Ω
- Maximum Gate Threshold Voltage : 1.8V
- Minimum Gate Threshold Voltage : 2.9V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Depletion
- Category : Small Signal
- Maximum Power Dissipation : 360 mW
- Maximum Operating Temperature : +150 °C
- CODE No.:753-2844
| Order No. | 63-5058-08 | |
|---|---|---|
| Model No. | BSS169H6327XTSA1 | |
| Standard price |
JPY: 1,100
USD: 6.84
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(25pieces) | |
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| Stock in Japan | - | |
![[Discontinued]BSS169H6327XTSA1 N-Channel MOSFET, 170 mA, 100 V Depletion SIPMOS, 3-Pin SOT-23 Infineon BSS169H6327XTSA1](https://aimg.as-1.co.jp/c/63/5058/08/63505808.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)