63-5057-22 IPP110N20N3GXKSA1 N-Channel MOSFET, 88 A, 200 V OptiMOS 3, 3-Pin TO-220 Infineon IPP110N20N3GXKSA1
Features
- Infineon OptiMOS™3 Power MOSFETs, 100V and over
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 88 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 11 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 300 W
- Typical Turn-Off Delay Time : 41 ns
- CODE No.:752-8381
| Order No. | 63-5057-22 | |
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| Model No. | IPP110N20N3GXKSA1 | |
| Standard price |
JPY: 860
USD: 5.39
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1piece | |
| Stock in Japan |
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| Supplier Stock |
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