63-5057-16 ［Discontinued］BSP300H6327XUSA1 N-Channel MOSFET, 190 mA, 800 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon BSP300H6327XUSA1
Features
- Infineon SIPMOS® N-Channel MOSFETs
Spec
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 190 mA
- Maximum Drain Source Voltage : 800 V
- Maximum Drain Source Resistance : 20 Ω
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Small Signal
- Maximum Power Dissipation : 1.8 W
- Dimensions : 6.5 x 3.5 x 1.6mm
- CODE No.:752-8211
| Order No. | 63-5057-16 | |
|---|---|---|
| Model No. | BSP300H6327XUSA1 | |
| Standard price |
JPY: 820
USD: 5.14
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |