63-5027-98 IRLML2060TRPBF N-Channel MOSFET, 1.2 A, 60 V HEXFET, 3-Pin SOT-23 Infineon IRLML2060TRPBF
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63-5027-98 IRLML2060TRPBF N-Channel MOSFET, 1.2 A, 60 V HEXFET, 3-Pin SOT-23 Infineon IRLML2060TRPBF 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 63-5027-98 IRLML2060TRPBF N-Channel MOSFET, 1.2 A, 60 V HEXFET, 3-Pin SOT-23 Infineon IRLML2060TRPBF
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63-5027-98 IRLML2060TRPBF N-Channel MOSFET, 1.2 A, 60 V HEXFET, 3-Pin SOT-23 Infineon IRLML2060TRPBF 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 63-5027-98 IRLML2060TRPBF N-Channel MOSFET, 1.2 A, 60 V HEXFET, 3-Pin SOT-23 Infineon IRLML2060TRPBF
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63-5027-98 IRLML2060TRPBF N-Channel MOSFET, 1.2 A, 60 V HEXFET, 3-Pin SOT-23 Infineon IRLML2060TRPBF 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 63-5027-98 IRLML2060TRPBF N-Channel MOSFET, 1.2 A, 60 V HEXFET, 3-Pin SOT-23 Infineon IRLML2060TRPBF
Features
- N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity：1bag(20pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 1.2 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 480 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -16 V, +16 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.25 W
- Typical Turn-Off Delay Time : 3.7 ns
- CODE No.:725-9357
Order No. 63-5027-98 Model No. IRLML2060TRPBF Standard price JPY: 940 USD: 5.90 Excange rate 1USD= 159.42JPY
Valid price in JapanQuantity 1bag(20pieces) Stock in Japan 
Supplier Stock
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