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• 63-5027-93 IRLML0060TRPBF N-Channel MOSFET, 2.7 A, 60 V HEXFET, 3-Pin SOT-23 Infineon　IRLML0060TRPBF

Infineon

63-5027-93　IRLML0060TRPBF N-Channel MOSFET, 2.7 A, 60 V HEXFET, 3-Pin SOT-23 Infineon　IRLML0060TRPBF

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特徴

• N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

• Quantity：1bag(20pieces)
• Channel Type : N
• Maximum Continuous Drain Current : 2.7 A
• Maximum Drain Source Voltage : 60 V
• Maximum Drain Source Resistance : 92 mΩ
• Maximum Gate Threshold Voltage : 2.5V
• Minimum Gate Threshold Voltage : 1V
• Maximum Gate Source Voltage : -16 V, +16 V
• Package Type : SOT-23
• Mounting Type : Surface Mount
• Transistor Configuration : Single
• Channel Mode : Enhancement
• Category : Power MOSFET
• Maximum Power Dissipation : 1.25 W
• Typical Turn-Off Delay Time : 6.8 ns
• CODE No.:725-9341
•  

Order No.Order No.ss="init"> 取扱点数300万点 How to use English China Indonesia Korea Thailand Vietnam Contact us すべてのカテゴリ すべてのカテゴリ Lab Instruments & Supplies Factory Work Tools & Supplies Clean Room/Anti Static Supplies Medical, Nursing & Care Products Food Sanitation & Inspection Office Supplies and Stationery Emergency Supplies Education, Learning Supplies Specially Ordered Item Featured Products Contact us Quote Other Requests AXEL GLOBAL カテゴリ一覧 Lab Instruments & Supplies Electronic/Electrical Parts and Controll Equipments Electronics Components, Power & Connectors Semiconductors Discrete Semiconductors 63-5027-93 IRLML0060TRPBF N-Channel MOSFET, 2.7 A, 60 V HEXFET, 3-Pin SOT-23 Infineon　IRLML0060TRPBF Infineon 63-5027-93　IRLML0060TRPBF N-Channel MOSFET, 2.7 A, 60 V HEXFET, 3-Pin SOT-23 Infineon　IRLML0060TRPBF 印刷 PDF 特徴 N-Channel Power MOSFET 60V to 80V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. 仕様 Quantity：1bag(20pieces) Channel Type : N Maximum Continuous Drain Current : 2.7 A Maximum Drain Source Voltage : 60 V Maximum Drain Source Resistance : 92 mΩ Maximum Gate Threshold Voltage : 2.5V Minimum Gate Threshold Voltage : 1V Maximum Gate Source Voltage : -16 V, +16 V Package Type : SOT-23 Mounting Type : Surface Mount Transistor Configuration : Single Channel Mode : Enhancement Category : Power MOSFET Maximum Power Dissipation : 1.25 W Typical Turn-Off Delay Time : 6.8 ns CODE No.:725-9341   アズワン品番 63-5027-93 Model No. IRLML0060TRPBF 標準価格 JPY: 1,470 USD: 9.22 Excange rate 1USD= 159.42JPY Valid price in Japan Quantity 1bag(20pieces) Stock in Japan Supplier Stock Quote Other Requests This page is the page of IRLML0060TRPBF N-Channel MOSFET, 2.7 A, 60 V HEXFET, 3-Pin SOT-23 Infineon sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.