63-5027-88 ［Discontinued］IRF7351PBF Dual N-Channel MOSFET, 8 A, 60 V HEXFET, 8-Pin SOIC Infineon IRF7351PBF
Features
- Dual N-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N-channel configuration.
Spec
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 8 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 17.8 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Pin Count : 8
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2 W
- Maximum Operating Temperature : +150 °C
- CODE No.:725-9237
| Order No. | 63-5027-88 | |
|---|---|---|
| Model No. | IRF7351PBF | |
| Standard price |
JPY: 930
USD: 5.83
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |