63-5004-80 [Discontinued]STQ1HNK60R-AP N-Channel MOSFET, 400 mA, 600 V MDmesh, SuperMESH, 3-Pin TO-92 STMicroelectronics STQ1HNK60R-AP
Features
- N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
Spec
- Quantity:1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 400 mA
- Maximum Drain Source Voltage : 600 V
- Maximum Drain Source Resistance : 8.5 Ω
- Maximum Gate Threshold Voltage : 3.7V
- Minimum Gate Threshold Voltage : 2.25V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : TO-92
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 3 W
- Dimensions : 4.95 x 3.94 x 4.95mm
- CODE No.:714-6796
| Order No. | 63-5004-80 | |
|---|---|---|
| Model No. | STQ1HNK60R-AP | |
| Standard price |
JPY: 560
USD: 3.48
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
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| Stock in Japan | - | |
![[Discontinued]STQ1HNK60R-AP N-Channel MOSFET, 400 mA, 600 V MDmesh, SuperMESH, 3-Pin TO-92 STMicroelectronics STQ1HNK60R-AP](https://aimg.as-1.co.jp/c/63/5004/80/63500480.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)