63-4997-32 SI7850DP-T1-E3 N-Channel MOSFET, 6.2 A, 60 V, 8-Pin PowerPAK SO Vishay SI7850DP-T1-E3
Features
- N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
Spec
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 6.2 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 22 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : PowerPAK SO
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.8 W
- Maximum Operating Temperature : +150 °C
- CODE No.:710-4764
| Order No. | 63-4997-32 | |
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| Model No. | SI7850DP-T1-E3 | |
| Standard price |
JPY: 2,860
USD: 17.93
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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