63-4997-01 ［Discontinued］SI4900DY-T1-GE3 Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3
Features
- Dual N-Channel MOSFET, Vishay Semiconductor
Spec
- Quantity：1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 4.3 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 58 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Transistor Configuration : Isolated
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2 W
- Typical Turn-Off Delay Time : 15 ns, 20 ns
- CODE No.:710-3364
| Order No. | 63-4997-01 | |
|---|---|---|
| Model No. | SI4900DY-T1-GE3 | |
| Standard price |
JPY: 2,070
USD: 12.98
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
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| Stock in Japan | - | |