Vishay

63-4996-99 SI4435DDY-T1-GE3 P-Channel MOSFET, 8.1 A, 30 V, 8-Pin SOIC Vishay SI4435DDY-T1-GE3

Features

  • P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

Spec

  • Quantity:1bag(10pieces)
  • Channel Type : P
  • Maximum Continuous Drain Current : 8.1 A
  • Maximum Drain Source Voltage : 30 V
  • Maximum Drain Source Resistance : 24 mΩ
  • Minimum Gate Threshold Voltage : 1V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOIC
  • Mounting Type : Surface Mount
  • Pin Count : 8
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 2.5 W
  • Typical Turn-On Delay Time : 10 ns, 42 ns
  • CODE No.:710-3339
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Order No. 63-4996-99
Model No. SI4435DDY-T1-GE3
Standard price JPY: 1,510 USD: 9.40
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity 1bag(10pieces)
Stock in Japan
Supplier Stock