63-4996-98 ［Discontinued］SI4464DY-T1-GE3 N-Channel MOSFET, 1.7 A, 200 V, 8-Pin SOIC Vishay SI4464DY-T1-GE3
Features
- N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
Spec
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 1.7 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 240 mΩ
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.5 W
- Maximum Operating Temperature : +150 °C
- CODE No.:710-3333
| Order No. | 63-4996-98 | |
|---|---|---|
| Model No. | SI4464DY-T1-GE3 | |
| Standard price |
JPY: 680
USD: 4.23
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
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| Stock in Japan | - | |