63-4996-95 ［Discontinued］SI2308BDS-T1-GE3 N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay SI2308BDS-T1-GE3
Features
- N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
Spec
- Quantity：1bag(20pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 1.9 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 156 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-23 (TO-236)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.09 W
- Dimensions : 3.04 x 1.4 x 1.02mm
- CODE No.:710-3257
| Order No. | 63-4996-95 | |
|---|---|---|
| Model No. | SI2308BDS-T1-GE3 | |
| Standard price |
JPY: 2,310
USD: 14.37
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(20pieces) | |
|
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| Stock in Japan | - | |