63-4996-94 SI2309CDS-T1-GE3 P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity：1bag(10pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 1.2 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 345 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1 W
- Typical Turn-Off Delay Time : 15 ns
- CODE No.:710-3250
| Order No. | 63-4996-94 | |
|---|---|---|
| Model No. | SI2309CDS-T1-GE3 | |
| Standard price |
JPY: 1,120
USD: 7.02
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(10pieces) | |
| Stock in Japan |
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| Supplier Stock |
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