63-4996-92 SI2303CDS-T1-GE3 P-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 Vishay SI2303CDS-T1-GE3
Features
- P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
Spec
- Quantity：1bag(20pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 1.9 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 190 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1 W
- Typical Turn-Off Delay Time : 12 ns
- CODE No.:710-3241
| Order No. | 63-4996-92 | |
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| Model No. | SI2303CDS-T1-GE3 | |
| Standard price |
JPY: 1,920
USD: 11.95
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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