63-4996-91 SI2301CDS-T1-GE3 P-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 Vishay SI2301CDS-T1-GE3
Features
- P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
Spec
- Quantity：1bag(20pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 2.3 A
- Maximum Drain Source Voltage : 20 V
- Maximum Drain Source Resistance : 112 mΩ
- Minimum Gate Threshold Voltage : 0.4V
- Maximum Gate Source Voltage : -8 V, +8 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 860 mW
- Typical Turn-Off Delay Time : 30 ns
- CODE No.:710-3238
| Order No. | 63-4996-91 | |
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| Model No. | SI2301CDS-T1-GE3 | |
| Standard price |
JPY: 1,810
USD: 11.26
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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