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Listed products : 3 milion productsListed products : 3 milion products"init"> 63-4966-30 IRFP4668PBF N-Channel MOSFET, 130 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4668PBF 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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Contact usContact usinit"> 63-4966-30 IRFP4668PBF N-Channel MOSFET, 130 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4668PBF 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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  • 63-4966-30 IRFP4668PBF N-Channel MOSFET, 130 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4668PBF
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63-4966-30 IRFP4668PBF N-Channel MOSFET, 130 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4668PBF

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  • IRFP4668PBF N-Channel MOSFET, 130 A, 200 V HEXFET, 3-Pin TO-247AC Infineon IRFP4668PBF

特徴

  • Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon. Motor Control MOSFET. Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications. Synchronous Rectifier MOSFET. A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 130 A
  • Maximum Drain Source Voltage : 200 V
  • Maximum Drain Source Resistance : 10 mΩ
  • Maximum Gate Threshold Voltage : 5V
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : TO-247AC
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 520 W
  • Dimensions : 15.87 x 5.31 x 20.7mm
  • CODE No.:688-7027
  •  
Order No. 63-4966-30
Model No. IRFP4668PBF
Standard price JPY: 990 USD: 6.21
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1piece
Stock in Japan
Supplier Stock

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