63-4966-16 IRFB5620PBF N-Channel MOSFET, 25 A, 200 V HEXFET, 3-Pin TO-220AB Infineon IRFB5620PBF
Features
- Digital Audio MOSFET, Infineon. Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
SpecSpec class="init">
63-4966-16 IRFB5620PBF N-Channel MOSFET, 25 A, 200 V HEXFET, 3-Pin TO-220AB Infineon IRFB5620PBF 【AXEL GLOBAL】 アズワン
Contact us
Infineon
63-4966-16 IRFB5620PBF N-Channel MOSFET, 25 A, 200 V HEXFET, 3-Pin TO-220AB Infineon IRFB5620PBF
特徴
- Digital Audio MOSFET, Infineon. Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
仕様
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 25 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 73 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 14 W
- Typical Turn-Off Delay Time : 17.1 ns
- CODE No.:688-6973
-
Order No.Order No.ss="init">
63-4966-16 IRFB5620PBF N-Channel MOSFET, 25 A, 200 V HEXFET, 3-Pin TO-220AB Infineon IRFB5620PBF 【AXEL GLOBAL】 アズワン
Contact us
Infineon
63-4966-16 IRFB5620PBF N-Channel MOSFET, 25 A, 200 V HEXFET, 3-Pin TO-220AB Infineon IRFB5620PBF
特徴
- Digital Audio MOSFET, Infineon. Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
仕様
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 25 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 73 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 14 W
- Typical Turn-Off Delay Time : 17.1 ns
- CODE No.:688-6973
-
アズワン品番
63-4966-16
Model No.
IRFB5620PBF
標準価格
JPY: 770
USD: 4.83
Excange rate 1USD= 159.42JPY
Valid price in Japan
Quantity
1bag(2pieces)
Stock in Japan
Supplier Stock
63-4966-16 IRFB5620PBF N-Channel MOSFET, 25 A, 200 V HEXFET, 3-Pin TO-220AB Infineon IRFB5620PBF
特徴
- Digital Audio MOSFET, Infineon. Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.
仕様
- Quantity:1bag(2pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 25 A
- Maximum Drain Source Voltage : 200 V
- Maximum Drain Source Resistance : 73 mΩ
- Maximum Gate Threshold Voltage : 5V
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-220AB
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 14 W
- Typical Turn-Off Delay Time : 17.1 ns
- CODE No.:688-6973
Order No.Order No.ss="init">
63-4966-16 IRFB5620PBF N-Channel MOSFET, 25 A, 200 V HEXFET, 3-Pin TO-220AB Infineon IRFB5620PBF特徴
仕様
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