63-4937-12 ［Discontinued］FQPF8N80C N-Channel MOSFET, 8 A, 800 V QFET, 3-Pin TO-220F ON Semiconductor FQPF8N80C
FeaturesFeatures class="init">
［Discontinued］FQPF8N80C N-Channel MOSFET, 8 A, 800 V QFET, 3-Pin TO-220F ON Semiconductor FQPF8N80C 63-4937-12 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Contact us
ON Semiconductor
63-4937-12 ［Discontinued］FQPF8N80C N-Channel MOSFET, 8 A, 800 V QFET, 3-Pin TO-220F ON Semiconductor FQPF8N80C
-
特徴
- QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 8 A
- Maximum Drain Source Voltage : 800 V
- Maximum Drain Source Resistance : 1.55 Ω
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : TO-220F
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 59 W
- Height : 9.19mm
- CODE No.:671-5326
-
アズワン品番
63-4937-12
型番
FQPF8N80C
標準価格
JPY: 1,360
USD: 8.46
Excange rate 1USD= 160.72JPY
Valid price in Japan
入り数
1bag(5pieces)
![<!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->](/en/asone/img/usestop_en_US.png?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)
在庫数
-
63-4937-12 ［Discontinued］FQPF8N80C N-Channel MOSFET, 8 A, 800 V QFET, 3-Pin TO-220F ON Semiconductor FQPF8N80C
特徴
- QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 8 A
- Maximum Drain Source Voltage : 800 V
- Maximum Drain Source Resistance : 1.55 Ω
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : TO-220F
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 59 W
- Height : 9.19mm
- CODE No.:671-5326
| アズワン品番 | 63-4937-12 | |
|---|---|---|
| 型番 | FQPF8N80C | |
| 標準価格 |
JPY: 1,360
USD: 8.46
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| 入り数 | 1bag(5pieces) | |
|
|
||
| 在庫数 | - | |