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63-4937-07　［Discontinued］FQPF630 N-Channel MOSFET, 6.3 A, 200 V QFET, 3-Pin TO-220F ON Semiconductor　FQPF630

Features

  • QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity：1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 6.3 A
  • Maximum Drain Source Voltage : 200 V
  • Maximum Drain Source Resistance : 400 mΩ
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -25 V, +25 V
  • Package Type : TO-220F
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 38 W
  • Typical Turn-Off Delay Time : 47 ns
  • CODE No.:671-5284
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Order No. 63-4937-07
Model No. FQPF630
Standard price JPY: 610 USD: 3.82
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
  Discontinued
Stock in Japan -

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