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63-4937-03　FQPF3N80C N-Channel MOSFET, 3 A, 800 V QFET, 3-Pin TO-220F ON Semiconductor　FQPF3N80C

Features

  • QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity：1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 3 A
  • Maximum Drain Source Voltage : 800 V
  • Maximum Drain Source Resistance : 4.8 Ω
  • Minimum Gate Threshold Voltage : 3V
  • Maximum Gate Source Voltage : -30 V, +30 V
  • Package Type : TO-220F
  • Mounting Type : Through Hole
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 39 W
  • Typical Turn-Off Delay Time : 22.5 ns
  • CODE No.:671-5250
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Order No. 63-4937-03
Model No. FQPF3N80C
Standard price JPY: 1,770 USD: 11.10
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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