Features

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

Quantity：1bag(5pieces)

Channel Type : N

Maximum Continuous Drain Current : 4 A

Maximum Drain Source Voltage : 900 V

Maximum Drain Source Resistance : 4.2 Ω

Minimum Gate Threshold Voltage : 3V

Maximum Gate Source Voltage : -30 V, +30 V

Package Type : TO-220

Mounting Type : Through Hole

Transistor Configuration : Single

Channel Mode : Enhancement

Category : Power MOSFET

Maximum Power Dissipation : 140 W

Typical Input Capacitance @ Vds : 740 pF@ 25 V

CODE No.:671-5130

Order No.

63-4936-90

Model No.

FQP4N90C

Standard price

JPY: 920 USD: 5.72

Excange rate 1USD= 160.72JPY
Valid price in Japan

Quantity

1bag(5pieces)

Stock in Japan

ON Semiconductor

63-4936-90　［Discontinued］FQP4N90C N-Channel MOSFET, 4 A, 900 V QFET, 3-Pin TO-220 ON Semiconductor　FQP4N90C

印刷

特徴

QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

仕様

Quantity：1bag(5pieces)
Channel Type : N
Maximum Continuous Drain Current : 4 A
Maximum Drain Source Voltage : 900 V
Maximum Drain Source Resistance : 4.2 Ω
Minimum Gate Threshold Voltage : 3V
Maximum Gate Source Voltage : -30 V, +30 V
Package Type : TO-220
Mounting Type : Through Hole
Transistor Configuration : Single
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 140 W
Typical Input Capacitance @ Vds : 740 pF@ 25 V
CODE No.:671-5130

アズワン品番	63-4936-90
型番	FQP4N90C
標準価格	JPY: 920 USD: 5.72 Excange rate 1USD= 160.72JPY Valid price in Japan
入り数	1bag(5pieces)

在庫数	-