63-4936-75 ［Discontinued］FQA13N80-F109 N-Channel MOSFET, 12.6 A, 800 V QFET, 3-Pin TO-3PN ON Semiconductor FQA13N80-F109
Features
- QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity：1piece
- Channel Type : N
- Maximum Continuous Drain Current : 12.6 A
- Maximum Drain Source Voltage : 800 V
- Maximum Drain Source Resistance : 750 mΩ
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : TO-3PN
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 300 W
- Maximum Operating Temperature : +150 °C
- CODE No.:671-4897
| Order No. | 63-4936-75 | |
|---|---|---|
| Model No. | FQA13N80-F109 | |
| Standard price |
JPY: 610
USD: 3.80
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1piece | |
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| Stock in Japan | - | |