63-4936-69 ［Discontinued］BS170 N-Channel MOSFET, 500 mA, 60 V, 3-Pin TO-92 ON Semiconductor BS170
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity：1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 500 mA
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 5 Ω
- Maximum Gate Threshold Voltage : 3V
- Minimum Gate Threshold Voltage : 0.8V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-92
- Mounting Type : Through Hole
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 830 mW
- Height : 5.33mm
- CODE No.:671-4736
| Order No. | 63-4936-69 | |
|---|---|---|
| Model No. | BS170 | |
| Standard price |
JPY: 360
USD: 2.24
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
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| Stock in Japan | - | |