63-4936-68 2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor 2N7000
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity：1bag(20pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 200 mA
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 5 Ω
- Minimum Gate Threshold Voltage : 0.8V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : TO-92
- Mounting Type : Through Hole
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Small Signal
- Maximum Power Dissipation : 400 mW
- Dimensions : 5.2 x 4.19 x 5.33mm
- CODE No.:671-4733
| Order No. | 63-4936-68 | |
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| Model No. | 2N7000 | |
| Standard price |
JPY: 1,450
USD: 9.02
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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| Quantity | 1bag(20pieces) | |
| Stock in Japan |
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| Supplier Stock |
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