63-4936-36 NDS331N N-Channel MOSFET, 1.3 A, 20 V, 3-Pin SOT-23 ON Semiconductor NDS331N
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 1.3 A
- Maximum Drain Source Voltage : 20 V
- Maximum Drain Source Resistance : 160 mΩ
- Minimum Gate Threshold Voltage : 0.5V
- Maximum Gate Source Voltage : +8 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 500 mW
- Typical Input Capacitance @ Vds : 162 pF @ 10 V
- CODE No.:671-1078
| Order No. | 63-4936-36 | |
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| Model No. | NDS331N | |
| Standard price |
JPY: 670
USD: 4.20
Excange rate 1USD= 159.53JPY
Valid price in Japan |
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| Quantity | 1bag(5pieces) | |
| Stock in Japan |
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| Supplier Stock |
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