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ON Semiconductor

63-4936-34　FQT7N10LTF N-Channel MOSFET, 1.7 A, 100 V QFET, 3 + Tab-Pin SOT-223 ON Semiconductor　FQT7N10LTF

Features

  • QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity：1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 1.7 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 350 mΩ
  • Minimum Gate Threshold Voltage : 1V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-223
  • Mounting Type : Surface Mount
  • Pin Count : 3 + Tab
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 2 W
  • Dimensions : 6.5 x 3.56 x 1.6mm
  • CODE No.:671-1062
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Order No. 63-4936-34
Model No. FQT7N10LTF
Standard price JPY: 1,120 USD: 7.02
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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