63-4936-29 ［Discontinued］FQD2N100TM N-Channel MOSFET, 1.6 A, 1000 V QFET, 3-Pin DPAK ON Semiconductor FQD2N100TM
Features
- QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
Spec
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 1.6 A
- Maximum Drain Source Voltage : 1000 V
- Maximum Drain Source Resistance : 9 Ω
- Minimum Gate Threshold Voltage : 3V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Typical Input Capacitance @ Vds : 400 pF@ 25 V
- CODE No.:671-0999
| Order No. | 63-4936-29 | |
|---|---|---|
| Model No. | FQD2N100TM | |
| Standard price |
JPY: 560
USD: 3.48
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
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| Stock in Japan | - | |