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63-4936-25　FQD13N10LTM N-Channel MOSFET, 10 A, 100 V QFET, 3-Pin DPAK ON Semiconductor　FQD13N10LTM

Features

  • QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity：1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 10 A
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 180 mΩ
  • Minimum Gate Threshold Voltage : 1V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : DPAK (TO-252)
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 2.5 W
  • Typical Turn-Off Delay Time : 22 ns
  • CODE No.:671-0952
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Order No. 63-4936-25
Model No. FQD13N10LTM
Standard price JPY: 910 USD: 5.70
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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