63-4936-24 FQD11P06TM P-Channel MOSFET, 9.4 A, 60 V, 3-Pin DPAK ON Semiconductor FQD11P06TM
Features
- Enhancement Mode P-Channel MOSFET, ON Semiconductor. ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi ‘s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. Features and Benefits:.
Spec
- Quantity：1bag(5pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 9.4 A
- Maximum Drain Source Voltage : 60 V
- Maximum Drain Source Resistance : 185 mΩ
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -30 V, +30 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Typical Turn-Off Delay Time : 15 ns
- CODE No.:671-0949
| Order No. | 63-4936-24 | |
|---|---|---|
| Model No. | FQD11P06TM | |
| Standard price |
JPY: 1,450
USD: 9.09
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|