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63-4936-23　FQD12N20LTM N-Channel MOSFET, 9 A, 200 V QFET, 3-Pin DPAK ON Semiconductor　FQD12N20LTM

Features

  • QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor. Fairchild Semiconductor s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

Spec

  • Quantity：1bag(5pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 9 A
  • Maximum Drain Source Voltage : 200 V
  • Maximum Drain Source Resistance : 280 mΩ
  • Minimum Gate Threshold Voltage : 1V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : DPAK (TO-252)
  • Mounting Type : Surface Mount
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 2.5 W
  • Typical Turn-Off Delay Time : 60 ns
  • CODE No.:671-0942
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Order No. 63-4936-23
Model No. FQD12N20LTM
Standard price JPY: 1,330 USD: 8.34
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(5pieces)
Stock in Japan
Supplier Stock

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