63-4936-18 ［Discontinued］FDT457N N-Channel MOSFET, 5 A, 30 V, 3+Tab-Pin SOT-223 ON Semiconductor FDT457N
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity：1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 5 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 60 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 3 W
- Typical Turn-Off Delay Time : 12 ns
- CODE No.:671-0784
| Order No. | 63-4936-18 | |
|---|---|---|
| Model No. | FDT457N | |
| Standard price |
JPY: 850
USD: 5.33
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
||
| Stock in Japan | - | |