63-4936-05 FDS4935BZ Dual P-Channel MOSFET, 6.9 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS4935BZ
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63-4936-05 FDS4935BZ Dual P-Channel MOSFET, 6.9 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS4935BZ
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特徴
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity：1bag(5pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 6.9 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 22 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -25 V, +25 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Transistor Configuration : Isolated
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.6 W
- Typical Turn-Off Delay Time : 68 ns
- CODE No.:671-0536
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Order No.
63-4936-05
Model No.
FDS4935BZ
Standard price
JPY: 1,570
USD: 9.77
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1bag(5pieces)
Stock in Japan
Supplier Stock
63-4936-05 FDS4935BZ Dual P-Channel MOSFET, 6.9 A, 30 V PowerTrench, 8-Pin SOIC ON Semiconductor FDS4935BZ
特徴
- PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
Spec
- Quantity：1bag(5pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 6.9 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 22 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -25 V, +25 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Transistor Configuration : Isolated
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 1.6 W
- Typical Turn-Off Delay Time : 68 ns
- CODE No.:671-0536
| Order No. | 63-4936-05 | |
|---|---|---|
| Model No. | FDS4935BZ | |
| Standard price |
JPY: 1,570
USD: 9.77
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
| Stock in Japan |
|
|
| Supplier Stock |
|
|