63-4935-99 FDN360P P-Channel MOSFET, 2 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN360P
特徴
- PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
Spec
- Quantity：1bag(5pieces)
- Channel Type : P
- Maximum Continuous Drain Current : 2 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 80 mΩ
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Pin Count : 3
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 500 mW
- Typical Turn-Off Delay Time : 11 ns
- CODE No.:671-0457
| Order No. | 63-4935-99 | ||||||||||||||
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| 型番 | FDN360P | ||||||||||||||
| Standard price |
JPY: 580
USD: 3.61
Excange rate 1USD= 160.72JPY
Valid price in Japan |
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63-4935-99 FDN360P P-Channel MOSFET, 2 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN360P特徴
仕様
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