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Contact usSearchlass="init"> 63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

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取扱点数300万点
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  • 63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP
ON Semiconductor

63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP

  • Print
  • PDF
  • FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP

Features

  • PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

Spec

  • Quantity:1bag(10pieces)
  • Channel Type : P
  • Maximum Continuous Drain Current : 1.3 A
  • Maximum Drain Source Voltage : 30 V
  • Maximum Drain Source Resistance : 180 mΩ
  • Minimum Gate Threshold Voltage : 0.8V
  • Maximum Gate Source Voltage : -25 V, +25 V
  • Package Type : SOT-23
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 500 mW
  • Typical Turn-Off Delay Time : 10 ns
  • CODE No.:671-0447
  •  
Order No.Order No.ss="init"> 63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP
ON Semiconductor

63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP

  • 印刷
  • PDF
  • FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP

特徴

  • PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

仕様

  • Quantity:1bag(10pieces)
  • Channel Type : P
  • Maximum Continuous Drain Current : 1.3 A
  • Maximum Drain Source Voltage : 30 V
  • Maximum Drain Source Resistance : 180 mΩ
  • Minimum Gate Threshold Voltage : 0.8V
  • Maximum Gate Source Voltage : -25 V, +25 V
  • Package Type : SOT-23
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 500 mW
  • Typical Turn-Off Delay Time : 10 ns
  • CODE No.:671-0447
  •  
アズワン品番 63-4935-97
型番 FDN352AP
Standard price JPY: 910 USD: 5.71
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1bag(10pieces)
在庫数
Supplier Stock

This page is the page of FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

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Let Us Help YouLet Us Help You 63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

AS ONE AS ONE

取扱点数300万点
How to use
Cách sử dụng
Contact us
すべてのカテゴリ
Contact us
Quote Other Requests
  • AXEL GLOBAL
  • カテゴリ一覧
  • Lab Instruments & Supplies
  • Electronic/Electrical Parts and Controll Equipments
  • Electronics Components, Power & Connectors
  • Semiconductors
  • Discrete Semiconductors
  • 63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP
ON Semiconductor

63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP

  • 印刷
  • PDF
  • FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP

特徴

  • PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

仕様

  • Quantity:1bag(10pieces)
  • Channel Type : P
  • Maximum Continuous Drain Current : 1.3 A
  • Maximum Drain Source Voltage : 30 V
  • Maximum Drain Source Resistance : 180 mΩ
  • Minimum Gate Threshold Voltage : 0.8V
  • Maximum Gate Source Voltage : -25 V, +25 V
  • Package Type : SOT-23
  • Mounting Type : Surface Mount
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 500 mW
  • Typical Turn-Off Delay Time : 10 ns
  • CODE No.:671-0447
  •  
アズワン品番 63-4935-97
型番 FDN352AP
標準価格 JPY: 910 USD: 5.71
Excange rate 1USD= 159.42JPY
Valid price in Japan
入り数 1bag(10pieces)
在庫数
サプライヤ在庫

[$1]FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor[/$1]

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Let Us Help You

  • Contact UsASONEs="init"> 63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->

    AS ONE AS ONE

    Listed products : 3 milion products
    How to use
    Cách sử dụng
    Contact us
    All Categories
    Contact us
    Quote Other Requests
    • AXEL GLOBAL
    • Categories
    • Lab Instruments & Supplies
    • Electronic/Electrical Parts and Controll Equipments
    • Electronics Components, Power & Connectors
    • Semiconductors
    • Discrete Semiconductors
    • 63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP
    ON Semiconductor

    63-4935-97 FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP

    • Print
    • PDF
    • FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor FDN352AP

    Features

    • PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

    Spec

    • Quantity:1bag(10pieces)
    • Channel Type : P
    • Maximum Continuous Drain Current : 1.3 A
    • Maximum Drain Source Voltage : 30 V
    • Maximum Drain Source Resistance : 180 mΩ
    • Minimum Gate Threshold Voltage : 0.8V
    • Maximum Gate Source Voltage : -25 V, +25 V
    • Package Type : SOT-23
    • Mounting Type : Surface Mount
    • Transistor Configuration : Single
    • Channel Mode : Enhancement
    • Category : Power MOSFET
    • Maximum Power Dissipation : 500 mW
    • Typical Turn-Off Delay Time : 10 ns
    • CODE No.:671-0447
    •  
    Order No. 63-4935-97
    Model No. FDN352AP
    Standard price JPY: 910 USD: 5.71
    Excange rate 1USD= 159.42JPY
    Valid price in Japan
    Quantity 1bag(10pieces)
    Stock in Japan
    Supplier Stock

    This page is the page of FDN352AP P-Channel MOSFET, 1.3 A, 30 V PowerTrench, 3-Pin SOT-23 ON Semiconductor sold by AS ONE CORPORATION. AXEL GLOBAL is a website that lists more than 3 million products that are used in a wide range of fields, including Research and Development, Production,Semiconductor, Medicine, Nursing care, and Food sanitation.

    Explore AXEL

    • Categories
    • Catalogs
    • Brands

    How to use

    • User’s Guide
    • For Re-seller
    • For End-User

    Get to Know Us

    • About us
    • Site Policy
    • Privacy Policy
    • Cookies Policy

    Let Us Help You

    • Contact Us
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    • Other Requests

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