63-4935-93 ［Discontinued］FDN337N N-Channel MOSFET, 2.2 A, 30 V, 3-Pin SOT-23 ON Semiconductor FDN337N
Features
- Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor. Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
Spec
- Quantity：1bag(10pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 2.2 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 65 mΩ
- Maximum Gate Threshold Voltage : 1V
- Minimum Gate Threshold Voltage : 0.4V
- Maximum Gate Source Voltage : -8 V, +8 V
- Package Type : SOT-23
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 500 mW
- Length : 2.92mm
- CODE No.:671-0429
| Order No. | 63-4935-93 | |
|---|---|---|
| Model No. | FDN337N | |
| Standard price |
JPY: 370
USD: 2.30
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(10pieces) | |
|
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| Stock in Japan | - | |