63-4935-88 [Discontinued]FDD8424H Dual N/P-Channel MOSFET, 6.5 A, 9 A, 40 V PowerTrench, 5-Pin DPAK ON Semiconductor FDD8424H
FeaturesFeatures class="init">
[Discontinued]FDD8424H Dual N/P-Channel MOSFET, 6.5 A, 9 A, 40 V PowerTrench, 5-Pin DPAK ON Semiconductor FDD8424H 63-4935-88 【AXEL GLOBAL】 アズワン
Contact us
ON Semiconductor
63-4935-88 [Discontinued]FDD8424H Dual N/P-Channel MOSFET, 6.5 A, 9 A, 40 V PowerTrench, 5-Pin DPAK ON Semiconductor FDD8424H
Features
- PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
SpecSpec class="init">
[Discontinued]FDD8424H Dual N/P-Channel MOSFET, 6.5 A, 9 A, 40 V PowerTrench, 5-Pin DPAK ON Semiconductor FDD8424H 63-4935-88 【AXEL GLOBAL】 アズワン
Contact us
ON Semiconductor
63-4935-88 [Discontinued]FDD8424H Dual N/P-Channel MOSFET, 6.5 A, 9 A, 40 V PowerTrench, 5-Pin DPAK ON Semiconductor FDD8424H
特徴
- PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
仕様
- Quantity:1bag(5pieces)
- Channel Type : N, P
- Maximum Continuous Drain Current : 6.5 A, 9 A
- Maximum Drain Source Voltage : 40 V
- Maximum Drain Source Resistance : 24 mΩ, 54 mΩ
- Maximum Gate Threshold Voltage : 3V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Transistor Configuration : Common Drain
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 3.1 W
- Height : 2.39mm
- CODE No.:671-0356
-
Order No.
63-4935-88
型番
FDD8424H
Standard price
JPY: 1,490
USD: 9.27
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1bag(5pieces)
Stock in Japan
-
63-4935-88 [Discontinued]FDD8424H Dual N/P-Channel MOSFET, 6.5 A, 9 A, 40 V PowerTrench, 5-Pin DPAK ON Semiconductor FDD8424H
Features
- PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
SpecSpec class="init">
[Discontinued]FDD8424H Dual N/P-Channel MOSFET, 6.5 A, 9 A, 40 V PowerTrench, 5-Pin DPAK ON Semiconductor FDD8424H 63-4935-88 【AXEL GLOBAL】 アズワン
Contact us
ON Semiconductor
63-4935-88 [Discontinued]FDD8424H Dual N/P-Channel MOSFET, 6.5 A, 9 A, 40 V PowerTrench, 5-Pin DPAK ON Semiconductor FDD8424H
特徴
- PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
仕様
- Quantity:1bag(5pieces)
- Channel Type : N, P
- Maximum Continuous Drain Current : 6.5 A, 9 A
- Maximum Drain Source Voltage : 40 V
- Maximum Drain Source Resistance : 24 mΩ, 54 mΩ
- Maximum Gate Threshold Voltage : 3V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Transistor Configuration : Common Drain
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 3.1 W
- Height : 2.39mm
- CODE No.:671-0356
-
Order No.
63-4935-88
型番
FDD8424H
Standard price
JPY: 1,490
USD: 9.27
Excange rate 1USD= 160.72JPY
Valid price in Japan
Quantity
1bag(5pieces)
Stock in Japan
-
63-4935-88 [Discontinued]FDD8424H Dual N/P-Channel MOSFET, 6.5 A, 9 A, 40 V PowerTrench, 5-Pin DPAK ON Semiconductor FDD8424H
特徴
- PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
仕様
- Quantity:1bag(5pieces)
- Channel Type : N, P
- Maximum Continuous Drain Current : 6.5 A, 9 A
- Maximum Drain Source Voltage : 40 V
- Maximum Drain Source Resistance : 24 mΩ, 54 mΩ
- Maximum Gate Threshold Voltage : 3V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Transistor Configuration : Common Drain
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 3.1 W
- Height : 2.39mm
- CODE No.:671-0356
| Order No. | 63-4935-88 | |
|---|---|---|
| 型番 | FDD8424H | |
| Standard price |
JPY: 1,490
USD: 9.27
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| Quantity | 1bag(5pieces) | |
|
|
||
| Stock in Japan | - | |
![[Discontinued]FDD8424H Dual N/P-Channel MOSFET, 6.5 A, 9 A, 40 V PowerTrench, 5-Pin DPAK ON Semiconductor FDD8424H](https://aimg.as-1.co.jp/c/63/4935/88/63493588.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)