63-4916-47 ［Discontinued］IRLR3110ZPBF N-Channel MOSFET, 63 A, 100 V HEXFET, 3-Pin DPAK Infineon IRLR3110ZPBF
-
PrintPrintlass="init">
［Discontinued］IRLR3110ZPBF N-Channel MOSFET, 63 A, 100 V HEXFET, 3-Pin DPAK Infineon IRLR3110ZPBF 63-4916-47 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@--> Contact us
Infineon 63-4916-47 ［Discontinued］IRLR3110ZPBF N-Channel MOSFET, 63 A, 100 V HEXFET, 3-Pin DPAK Infineon IRLR3110ZPBF
Features
- N-Channel Power MOSFET 100V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 63 A
- Maximum Drain Source Voltage : 100 V
- Maximum Drain Source Resistance : 14 mΩ
- Maximum Gate Threshold Voltage : 2.5V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -16 V, +16 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 140 W
- Typical Turn-Off Delay Time : 33 ns
- CODE No.:650-4514
Order No. 63-4916-47 Model No. IRLR3110ZPBF Standard price JPY: 1,160 USD: 7.22 Excange rate 1USD= 160.72JPY
Valid price in JapanQuantity 1bag(5pieces) 
Stock in Japan - -
