ON Semiconductor

63-4871-42 BSS123LT1G N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 ON Semiconductor BSS123LT1G

Features

  • N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

Spec

  • Quantity:1bag(10pieces)
  • Channel Type : N
  • Maximum Continuous Drain Current : 170 mA
  • Maximum Drain Source Voltage : 100 V
  • Maximum Drain Source Resistance : 6 Ω
  • Maximum Gate Threshold Voltage : 2.8V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : SOT-23
  • Mounting Type : Surface Mount
  • Pin Count : 3
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 225 mW
  • Width : 1.3mm
  • CODE No.:545-0135
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Order No. 63-4871-42
Model No. BSS123LT1G
Standard price JPY: 320 USD: 2.01
Excange rate 1USD= 159.53JPY
Valid price in Japan
Quantity 1bag(10pieces)
Stock in Japan
Supplier Stock