63-4869-37 [Discontinued]IRFR5305PBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin DPAK Infineon IRFR5305PBF
特徴
- P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity:1piece
- Channel Type : P
- Maximum Continuous Drain Current : 31 A
- Maximum Drain Source Voltage : 55 V
- Maximum Drain Source Resistance : 65 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : DPAK (TO-252)
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 110 W
- Typical Turn-Off Delay Time : 39 ns
- CODE No.:543-2496
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63-4869-37 [Discontinued]IRFR5305PBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin DPAK Infineon IRFR5305PBF特徴
仕様
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![[Discontinued]IRFR5305PBF P-Channel MOSFET, 31 A, 55 V HEXFET, 3-Pin DPAK Infineon IRFR5305PBF](https://aimg.as-1.co.jp/c/63/4869/37/63486937.jpg?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1)