63-4869-25 ［Discontinued］IRFL014NPBF N-Channel MOSFET, 2.7 A, 55 V HEXFET, 3+Tab-Pin SOT-223 Infineon IRFL014NPBF
特徴
- N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
仕様
- Quantity：1bag(5pieces)
- Channel Type : N
- Maximum Continuous Drain Current : 2.7 A
- Maximum Drain Source Voltage : 55 V
- Maximum Drain Source Resistance : 160 mΩ
- Maximum Gate Threshold Voltage : 4V
- Minimum Gate Threshold Voltage : 2V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOT-223
- Mounting Type : Surface Mount
- Transistor Configuration : Single
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.1 W
- Typical Turn-Off Delay Time : 12 ns
- CODE No.:543-1651
| アズワン品番 | 63-4869-25 | |
|---|---|---|
| 型番 | IRFL014NPBF | |
| 標準価格 |
JPY: 390
USD: 2.43
Excange rate 1USD= 160.72JPY
Valid price in Japan |
|
| 入り数 | 1bag(5pieces) | |
![<!--@[ia-1]@-->取扱停止<!--@/[ia-1]@-->](/en/asone/img/usestop_en_US.png?v=03790be0f2ba82c1280907a7033cf49dabaaa7c1){kind=small}
|
||
| 在庫数 | - | |