Infineon

63-4868-61 IRFI3205PBF N-Channel MOSFET, 64 A, 55 V HEXFET, 3-Pin TO-220 Infineon IRFI3205PBF

Features

  • N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

SpecSpec class="init"> 63-4868-61 IRFI3205PBF N-Channel MOSFET, 64 A, 55 V HEXFET, 3-Pin TO-220 Infineon IRFI3205PBF 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Infineon

63-4868-61 IRFI3205PBF N-Channel MOSFET, 64 A, 55 V HEXFET, 3-Pin TO-220 Infineon IRFI3205PBF

特徴

  • N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Spec

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 64 A
  • Maximum Drain Source Voltage : 55 V
  • Maximum Drain Source Resistance : 8 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-220
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 63 W
  • Typical Turn-Off Delay Time : 43 ns
  • CODE No.:542-9608
  •  
Order No.Order No.ss="init"> 63-4868-61 IRFI3205PBF N-Channel MOSFET, 64 A, 55 V HEXFET, 3-Pin TO-220 Infineon IRFI3205PBF 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
Infineon

63-4868-61 IRFI3205PBF N-Channel MOSFET, 64 A, 55 V HEXFET, 3-Pin TO-220 Infineon IRFI3205PBF

特徴

  • N-Channel Power MOSFET 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

仕様

  • Quantity:1piece
  • Channel Type : N
  • Maximum Continuous Drain Current : 64 A
  • Maximum Drain Source Voltage : 55 V
  • Maximum Drain Source Resistance : 8 mΩ
  • Maximum Gate Threshold Voltage : 4V
  • Minimum Gate Threshold Voltage : 2V
  • Maximum Gate Source Voltage : -20 V, +20 V
  • Package Type : TO-220
  • Mounting Type : Through Hole
  • Transistor Configuration : Single
  • Channel Mode : Enhancement
  • Category : Power MOSFET
  • Maximum Power Dissipation : 63 W
  • Typical Turn-Off Delay Time : 43 ns
  • CODE No.:542-9608
  •  
アズワン品番 63-4868-61
Model No. IRFI3205PBF
標準価格 JPY: 740 USD: 4.64
Excange rate 1USD= 159.53JPY
Valid price in Japan
入り数 1piece
在庫数
サプライヤ在庫