P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Spec
Quantity：1piece
Channel Type : P
Maximum Continuous Drain Current : 19 A
Maximum Drain Source Voltage : 55 V
Maximum Drain Source Resistance : 100 mΩ
Maximum Gate Threshold Voltage : 4V
Minimum Gate Threshold Voltage : 2V
Maximum Gate Source Voltage : -20 V, +20 V
Package Type : D2PAK (TO-263)
Mounting Type : Surface Mount
Transistor Configuration : Single
Channel Mode : Enhancement
Category : Power MOSFET
Maximum Power Dissipation : 3.8 W
Typical Turn-Off Delay Time : 30 ns
CODE No.:542-9484
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［Discontinued］IRF9Z34NSPBF P-Channel MOSFET, 19 A, 55 V HEXFET, 3-Pin D2PAK Infineon IRF9Z34NSPBF 63-4868-54 【AXEL GLOBAL】<!--@[ss-27]@--> アズワン<!--@/[ss-27]@-->
P-Channel Power MOSFET 40V to 55V, Infineon. Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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