63-4866-68 ［Discontinued］IRF7389PBF Dual N/P-Channel MOSFET, 5.3 A, 7.3 A, 30 V HEXFET, 8-Pin SOIC Infineon IRF7389PBF
Features
- Dual N/P-Channel Power MOSFET, Infineon. Infineon s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
Spec
- Quantity：1piece
- Channel Type : N, P
- Maximum Continuous Drain Current : 5.3 A, 7.3 A
- Maximum Drain Source Voltage : 30 V
- Maximum Drain Source Resistance : 29 mΩ, 58 mΩ
- Maximum Gate Threshold Voltage : 1V
- Minimum Gate Threshold Voltage : 1V
- Maximum Gate Source Voltage : -20 V, +20 V
- Package Type : SOIC
- Mounting Type : Surface Mount
- Transistor Configuration : Isolated
- Channel Mode : Enhancement
- Category : Power MOSFET
- Maximum Power Dissipation : 2.5 W
- Typical Turn-Off Delay Time : 26 ns, 34 ns
- CODE No.:541-2004
| Order No. | 63-4866-68 | |
|---|---|---|
| Model No. | IRF7389PBF | |
| Standard price |
JPY: 150
USD: 0.94
Excange rate 1USD= 159.53JPY
Valid price in Japan |
|
| Quantity | 1piece | |
|
||
| Stock in Japan | - | |